KEC khb9d0n90p1 f1 free download

File name khb9d0n90p1_f1.pdf

SEMICONDUCTOR KHB9D0N90P1/F1 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, ID= 9A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS =10V Qg(typ.) =75nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KHB9D0N90P1 KHB9D0N90P1 KHB9D0N90F1 Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS 30 V @TC=25 9.0 9.0* ID Drain Current @TC=100 36 36* A Pulsed (Note1) IDP 36 36* Single Pulsed Avalanche Energy EAS 900 mJ (Note 2) Repetitive Avalanche Energy EAR 20.5 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 205 68 W PD Dissipation Derate above25 1.65 0.54 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.61 1.85 /W Thermal Resistance, Case-to-Sink RthCS 0.5 - /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. 2006. 5. 19 Revision No : 0 1/7 KHB9D0N90P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 ) C